| PART |
Description |
Maker |
| 2SCR574D |
NPN 2.0A 80V Middle Power Transistor
|
Rohm
|
| 2SCR514P5 |
Middle Power Transistors (80V / 700mA)
|
Rohm
|
| 2SCR533D 2SCR533PT100 |
NPN 3.0A 50V Middle Power Transistor
|
Rohm
|
| 2SCR573DA08 |
NPN 3.0A 50V Middle Power Transistor
|
Rohm
|
| 2SCR346P |
NPN 100mA 400V Middle Power Transistor
|
ROHM
|
| MJE170 MJE182 MJE171 MJE172 MJE180 MJE181 |
POWER TRANSISTORS(3.0A,40-80V,12.5W) 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
POWER TRANSISTORS(3.0A /40-80V /12.5W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| 2SC5574 2SC5574E 2SC5574F |
Power Transistor(????朵?绠?
4 A, 80 V, NPN, Si, POWER TRANSISTOR
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220FN
|
Rohm CO.,LTD.
|
| CDD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| BUY40 |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10
|
Seme LAB
|
| 2SB560 2SD438 2SD438F 2SD438E 2SB560E |
Low-Frequency Power Amp Applications
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|叩| 80V的五（巴西）总裁| 1A条一（c）|2VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|2VAR
|
http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
